2 edition of Minority-carrier lifetime in InP as a function of light bias found in the catalog.
Minority-carrier lifetime in InP as a function of light bias
1994 by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC], [Springfield, Va .
Written in English
|Other titles||Minority carrier lifetime in InP as a function of light bias|
|Statement||Jane A. Yater ... [et al.].|
|Series||NASA technical memorandum -- 106821|
|Contributions||Yater, Jane A., United States. National Aeronautics and Space Administration.|
|The Physical Object|
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Get this from a library. Minority-carrier lifetime in InP as a function of light bias. [Jane A Yater; United States. National Aeronautics and Space Administration.;]. Minority carrier diffusion lengths and lifetimes were determined for p-type Ga(1-x)InxAs with an In-content of 0 ≤ x ≤ by cathodoluminescence and time-resolved photoluminescence.
This paper deals with minority carrier lifetime and carrier concentration of Cu(In,Ga)Se2 (CIGS)-based thin film solar cells with a ZnS(n)/CIGS(p) heterojunction structure. SPIE Digital Library Proceedings. Proc. SPIEInfrared Sensors, Devices, and Applications; and Single Photon Imaging II, (16 September ); doi: Proc.
SPIEQuantum Sensing and Nano Electronics and Photonics XIV, (15 June ); doi: / Carrier Lifetime in Silicon. of Share & Embed. View Lab Report - lab-2 from ECE at University of Illinois, Chicago. PURPOSE: To measure the lifetime of the minority carriers in a given sample of semiconductor materials.