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Sunday, April 19, 2020 | History

2 edition of Minority-carrier lifetime in InP as a function of light bias found in the catalog.

Minority-carrier lifetime in InP as a function of light bias

Minority-carrier lifetime in InP as a function of light bias

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  • 38 Currently reading

Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC], [Springfield, Va .
Written in English

    Subjects:
  • Carrier lifetime.,
  • Doped crystals.,
  • Indium phosphides.,
  • Minority carriers.,
  • N-type semiconductors.,
  • P-type semiconductors.,
  • Photoluminescence.

  • Edition Notes

    Other titlesMinority carrier lifetime in InP as a function of light bias
    StatementJane A. Yater ... [et al.].
    SeriesNASA technical memorandum -- 106821
    ContributionsYater, Jane A., United States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL17115050M


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Minority-carrier lifetime in InP as a function of light bias Download PDF EPUB FB2

Get this from a library. Minority-carrier lifetime in InP as a function of light bias. [Jane A Yater; United States. National Aeronautics and Space Administration.;]. Minority carrier diffusion lengths and lifetimes were determined for p-type Ga(1-x)InxAs with an In-content of 0 ≤ x ≤ by cathodoluminescence and time-resolved photoluminescence.

This paper deals with minority carrier lifetime and carrier concentration of Cu(In,Ga)Se2 (CIGS)-based thin film solar cells with a ZnS(n)/CIGS(p) heterojunction structure. SPIE Digital Library Proceedings. Proc. SPIEInfrared Sensors, Devices, and Applications; and Single Photon Imaging II, (16 September ); doi: Proc.

SPIEQuantum Sensing and Nano Electronics and Photonics XIV, (15 June ); doi: / Carrier Lifetime in Silicon. of Share & Embed. View Lab Report - lab-2 from ECE at University of Illinois, Chicago. PURPOSE: To measure the lifetime of the minority carriers in a given sample of semiconductor materials.

THEORY: V(t).